SEMICONDUCTOR METHANE SENSOR Russian patent published in 2017 - IPC G01N27/12 

Abstract RU 2623658 C1

FIELD: measuring equipment.

SUBSTANCE: semiconductor methane sensor contains a dielectric substrate (1) and a sensitive layer (2) with metal electrodes (3) applied to its surface with a thickness of up to 0.2 mcm. The sensitive layer (2) is made on the basis of europium sulphide modified by the addition of samarium sulphide. The concentration of the additive does not exceed 25 moll. %.

EFFECT: sensor has a lower operating temperature for detecting methane in the ambient air.

4 cl, 3 dwg, 1 ex

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RU 2 623 658 C1

Authors

Kaminsky Vladimir Vasil'Evich

Solov'Ev Sergey Mikhailovich

Kazakov Sergey Alekseevich

Sharenkova Nataliya Viktorovna

Dates

2017-06-28Published

2016-03-22Filed