MICROWAVE OSCILLATOR Russian patent published in 1994 - IPC

FIELD: microwave technology. SUBSTANCE: microwave oscillator has on face side of its insulating substrate transistor 2 with leads of electrodes 3,4,5 connected to sections of microstrip lines 6,7,8 and also first half-wave microstrip cavity 9 and high-quality cavity 17; it is provided in addition with second half-wave microstrip cavity 10 electromagnetically coupled with first cavity 9 and slotted half-wave cavity 16. High-quality cavity 17 is made as hollow metal cavity or shielded sapphire cavity connected 10 metallized side of substrate 1 and electromagnetically coupled with second cavity 10 by means of half-wave slotted cavity 16 made in deposited layer of substrate 1 and placed perpendicular to cavity 10. EFFECT: improved design. 3 dwg, 1 tbl