SEMICONDUCTOR DEVICE Russian patent published in 2001 - IPC

FIELD: parametric amplifiers and oscillators, resonant circuits tuned within comprehensive range. SUBSTANCE: device has insulating or semiconductor layer that carries conducting section on its surface made in the form of coil covered with p or n semiconductor film and provided with ohmic contact; p-n junction or Schottky barrier is formed on film surface and provided with other ohmic contact whose dope shaping is nonuniform along direction crossing coil turns. Choice of film dope shaping and film thickness is limited by requirement of full depletion of film or its part by majority charge carriers up to breakdown of p-n junction or Schottky barrier as external bias complying with proposed equation is applied to its terminals. EFFECT: facilitated regulation of device inductance in response to changes in control voltage applied to its terminals. 4 dwg