SEMICONDUCTOR DIODE WITH LOW RESISTANCE OF CONTACT Russian patent published in 2001 - IPC

FIELD: semiconductor devices. SUBSTANCE: invention refers to device manufactured from narrow-slit semiconductors operating in infrared range of wave lengths. Proposed semiconductor diode with low resistance of contact includes active layer of p- or n- type material with energy of forbidden zone not less than 0.5 OeV forming p-n junction with first layer of doped material of n-type, second layer of doped material of n-type which can be located close to active layer or separated from it by other layers. Second layer of doped material of n-type is transparent for emitted or absorbed radiation whose energy is higher than energy of forbidden zone. EFFECT: provision for low resistance of contact, for transparency to radiation generated by device, reduced loss of generated radiation. 7 cl, 14 dwg