TRANSISTOR SWITCH INCORPORATING SHORT-CIRCUIT PROTECTIVE GEAR Russian patent published in 2001 - IPC

FIELD: pulse engineering. SUBSTANCE: transistor switch has first and second transistors 1 and 2 of different polarity of conductivity. Base of first transistor 1 is connected through resistor 3 to collector of second transistor 2 and through second leakage resistor 4, to emitter of first transistor 1 and to power bus. Collector of transistor 1 is connected through load to common bus. Base of transistor 2 is connected through third leakage resistor 7 to common bus and through fourth base resistor 8, to control bus. Base of third transistor 10 is connected through seventh resistor 14 to collector of transistor 1 and through eighth leakage resistor 15, to common bus and to emitter of transistor 10 whose collector is connected through fifth resistor 12 to emitter of transistor 2. Emitter of transistor 2 is connected through sixth resistor 12 and through capacitor to common bus. EFFECT: improved reliability of transistor switch. 1 dwg