CONTROL CIRCUIT FOR MIS TRANSISTOR BASED POWER SWITCH Russian patent published in 2010 - IPC H03K17/691 

Abstract RU 2384940 C2

FIELD: physics, radio.

SUBSTANCE: invention relates to pulse engineering and can be used in electronic switches, mainly based on field effect transistors and insulated-gate bipolar transistors. The control circuit for a MIS transistor based power switch which has a power transistor and an insulating transformer, also has a controlled generator, a first capacitor, a second capacitor, a power supply, a first resistor, a second resistor, a third resistor, a current sensor, a rectifier, a first switch, a second switch, a third switch, an OR circuit, a NOT circuit, a protection circuit and a power supply insulated from the control circuit. The control circuit switch is connected by the first terminal to the emitter of the controlled generator transistor, diode anode and the common terminal of the first and second winding of the insulating transformer, the second terminal of the first winding is connected to the first terminal of the first capacitor, the second terminal of which is connected to the collector of the controlled generator transistor and the first terminal of the first resistor whose second terminal is connected to the first terminal of the second resistor and to the positive terminal of the power supply, the second terminal of the second resistor is connected to the base of the controlled generator transistor, diode cathode and the first terminal of the third resistor, the second terminal of which is connected to the first terminal of the second capacitor whose second terminal is connected to the second terminal of the second winding of the insulating transformer, the third winding of the insulating transformer is connected to the rectifier, the output of which is connected to the control input of the first switch whose first output is connected to the positive terminal of the insulated power supply, the second output of the first switch is connected to the first terminal of the first resistor of the gate, the second terminal of which is connected to the gate of the power transistor and to the first terminal of the second resistor of the gate, the second terminal of which is connected to the first output of the second switch, the second output of which is connected to the negative terminal of the insulated power supply, the control input of the second switch is connected to the output of the OR circuit, the first input of which is connected to the output of the NOT circuit, the input of which is connected to the output of the rectifier and the control input of the first switch, the second input of the OR circuit is connected to the output of the protection circuit and the control input of the third switch which is connected by the first and second outputs to the fourth winding of the insulating transformer, the input of the protection circuit is connected to the output of the current sensor, the first input of which is connected to the source of the power transistor and the second input to the OUT 2 terminal, the drain of the power transistor is connected to the OUT 1 terminal of the power switch.

EFFECT: broader functional capabilities and increased reliability of the device.

1 dwg

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RU 2 384 940 C2

Authors

Gamenjuk Jurij Jur'Evich

Dates

2010-03-20Published

2008-05-20Filed