FIELD: instrumentation. SUBSTANCE: method can be utilized to measure temperature of objects heated by contact method with radiation. Method includes bringing of measurement junction of thermocouple in contact with tested object and recording of thermal electromotive force. Junction is brought in contact with tested object to distance that depends on electron path in material of object. This implementation of method makes it feasible to measure maximum temperature of object heated by radiation of electron beam. EFFECT: improved functional reliability of method. 1 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD FOR DEHYDROGENISATION OF WELDS OF THE MAIN GAS PIPELINES OF LARGE THICKNESS | 2017 |
|
RU2657676C1 |
METHOD FOR DEHYDROGENISATION OF WELDS OF PIPELINES | 2014 |
|
RU2580582C2 |
NONINVASIVE METHOD FOR CONTROLLING ELASTIC STRESS STATE IN FERRITE PRODUCTS | 2000 |
|
RU2184371C2 |
METHOD OF PULSED THERMOELECTRIC NONDESTRUCTIVE TESTING OF THERMOPHYSICAL PROPERTIES OF METALS AND SEMICONDUCTORS | 2017 |
|
RU2665590C1 |
METHOD OF MEASURING TEMPERATURE OF SURFACE OF SAMPLE, IRADIATED BY GAS PLASMA | 2006 |
|
RU2328707C2 |
CALORIMETER FOR MEASURING PULSE IONIZING RADIATIONS | 0 |
|
SU989963A1 |
METHOD FOR NUCLEAR-ABSORPTION SPECTRAL ANALYSIS OF ELEMENTARY COMPOSITION OF MATERIAL AND DEVICE WHICH IMPLEMENTS SAID METHOD | 1998 |
|
RU2157988C2 |
METHOD OF RADIATION AND HEAT TREATMENT OF MATERIALS | 0 |
|
SU1391808A1 |
DIAGNOSTIC TECHNIQUE FOR ELECTRIC MICROHETEROGENEITIESIN SEMICONDUCTOR HETEROSTRUCTURES, BASED ON INGAN/GAN | 2015 |
|
RU2606200C1 |
METHOD OF MANUFACTURING FERRITE PRODUCTS | 0 |
|
SU1787686A1 |
Authors
Dates
2001-05-27—Published
1999-11-15—Filed