DIAGNOSTIC TECHNIQUE FOR ELECTRIC MICROHETEROGENEITIESIN SEMICONDUCTOR HETEROSTRUCTURES, BASED ON INGAN/GAN Russian patent published in 2017 - IPC H01L21/66 

FIELD: electronics.

SUBSTANCE: invention relates to microelectronics and can be used for imaging electric microheterogeneities of technological origin: dislocations, pores, precipitates, etc. in semiconductor heterostructures with arbitrary design of active region, grown on Al₂O₃ substrates. Method of diagnostics of electric microheterogeneities in semiconductor heterostructures, based on InGaN/GaN substrate Al₂O₃ together with heterostructure and surface of earthed aluminium foil is irradiated by electron beam with energy density from 0.1 to 0.8 J/cm² and rate of increase of electric field intensity in heterostructure is no lower than 5⋅10¹³ V/cm⋅s. Limit power density is determined, above which electric discharges and related microdestruction arise in heterostructure. Microdestructions are recorded using optical microscope after multi-pulse radiation dose of not less than 6⋅10^-6 Kl/cm². Size and spatial distribution of electric microheterogeneities are visually indicated in heterostructure.

EFFECT: method enables diagnosing in atmospheric air without using complex and expensive equipment on substrates with arbitrary design of active region.

1 cl, 4 dwg