TWO-LEVEL NOISE GENERATOR (MODIFICATIONS) Russian patent published in 2001 - IPC

FIELD: microwave radio engineering, applicable as a noise temperature measure at precise noise measurements: measurements of low levels of noise temperature of signal sources and noise parameters of four-terminal networks, as well as for built-in monitoring in radio systems of various purpose. SUBSTANCE: the two-level noise generator (modifications) has a noise radiator with two outputs built around a inhomogeneous semiconductor with a Schottky barrier, first rectifier, as well as: - in the first modification - the second noise radiator built around an avalanche transit time diode, second rectifier, selector switch and a load, the first output of the noise radiator built around the semiconductor with a Schottky barrier is connected directly to the input of the first rectifier, whose output serves as the output of the two-level noise generator; the second output of the noise radiator built around the semiconductor with a Schottky barrier is connected via the selector switch either to the load, or via the second rectifier - to the output of the noise radiator built around the avalanche transit time diode; in the second modification - amplifier, circulator, selector switch and the load, the amplifier input is connected to the second arm of the circulator, the amplifier output - to the third arm of the circulator, the first arm of the circulator is connected to the selector switch, in the rest the construction is similar to that of the first modification. Each modification of the two-level noise generator has two stationary states with output levels T1. . .=(0.2 to 0.5)To and T2=(2 to 3)To changed over by an external command. EFFECT: reduced level of noise temperature. 3 cl, 2 dwg