PROCESS OF SPECTROSCOPY OF TRANSITION LAYER OF CONDUCTING SURFACE Russian patent published in 2001 - IPC

Abstract RU 2170913 C1

FIELD: investigation of fast-running processes on surface of metals and semiconductors by optical methods. SUBSTANCE: invention is related to instant determination of absorption spectra of thin transition layers by way of registration of characteristics of surface plasma polaritones (SPPT) excited on surface of specimen and can find use in spectrometry of oxide and adsorption layers. Process includes action on surface of specimen by focused white light, excitation of SPPT in it by this light, decomposition of reflected light into spectral components, registration of radiation of individual components, determination of optimum angle Φo of excitation of SPPT by each component, construction of dispersion curve k′(ν) of SPPT by results of measurement. Incident light is plane-polarized light with p and s components of field different from zero. Phase difference between components of field emerging with excitation of SPPT is compensated per each controlled component and value Φo of angle is determined by maximum angle of inclination of polarization plane of given component relative to plane of incidence. EFFECT: enhanced measurement accuracy. 2 dwg

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RU 2 170 913 C1

Authors

Nikitin A.K.

Dates

2001-07-20Published

2000-10-02Filed