METHOD OF MANUFACTURING WAFERS AND/OR FOIL SHEETS OF ANISOTROPIC PYROLYSIS BORON NITRIDE, FOIL SHEET MANUFACTURED BY THIS METHOD, ARTICLE MADE FROM BORON NITRIDE IN THE FORM OF WAFER PACK AND/OR FOIL SHEETS, AND METHOD FOR MANUFACTURE THEREOF Russian patent published in 2002 - IPC

FIELD: insulation materials. SUBSTANCE: invention relates to technology of manufacturing products from high-temperature dielectric insulation materials and technology of manufacture thereof utilizing technique of chemical deposition from gas phase to manufacture various part for microwave engineering and integrated circuits. Boron nitride wafers and/or foil sheets are obtained by forming on substrate disposed in reactor a pack containing parallel boron nitride layers. Formation of the latter is accomplished by repeated alternation of (i) chemical deposition of boron nitride from gas phase caused by interaction of boron trifluoride and ammonia and (ii) treatment of surface of deposited boron nitride layer for at least 15 min at the same temperature and pressure by gaseous agent passivating active sites of crystallization on surface of formed boron nitride layer to form boundaries. Thus manufactured pack is then split over the boundaries into wafers and/or foil sheets. Ammonia, nitrogen, hydrogen, methane, helium, argon/ or their mixtures are used as gaseous agent. Puncture resistance of product reaches 300-400 kW. EFFECT: increased Puncture resistance and simplified manufacture technology. 20 cl, 2 dwg, 3 tbl, 30 ex