FIELD: chemistry.
SUBSTANCE: invention relates to production of independent substrates of group III nitride for application in field of electronics and optoelectronics. Method for obtaining independent substrate 100 of group III nitride includes precipitation of first layer 102 of group III nitride on substrate 101 for growing, formation in first layer 102 of mechanically attenuated sacrificial layer 110, precipitation of second layer 107 of group III nitride on first layer 102 and separation of second layer 107 from substrate 101 on mechanically attenuated sacrificial layer, with stage of formation of mechanically attenuated sacrificial layer 110 includes formation of vertical holes 105, passing downward from free surface of first layer 102 of group III nitride to border of separation 109 between first layer 102 and substrate 101, lateral etching, through holes 105, first layer 102 in said border area 109 and lateral growing of holes 105 at stage of second layer 107 precipitation to provide continuous layer.
EFFECT: provision of effective separation of second layer of group III nitride from substrate with obtaining independent nitride crystal, which serves as substrate for additional precipitation of nitride.
7 cl, 3 dwg
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