GASES TO THE REACTOR SUPPLYING METHOD FOR THE GROUP III METALS NITRIDES BASED EPITAXIAL STRUCTURES GROWING AND DEVICE FOR ITS IMPLEMENTATION Russian patent published in 2018 - IPC C30B25/14 C30B25/16 C30B25/22 C30B35/00 C30B29/38 C30B29/40 C23C16/455 C23C16/52 C23C16/34 B01F3/02 B01F5/02 B01F15/06 

FIELD: chemical industry.

SUBSTANCE: invention relates to the coatings chemical application technology by the gaseous compounds decomposition, in particular, to the gases into the reaction chamber introduction methods. Gases to the reactor supplying method for the group III metals nitrides based epitaxial structures growing includes supply into the reactor 5 of at least two streams of reactive gases through inputs 1, 2, at least one of which is mixed with the carrier gas, at that, as the group III metals source using the trimethyl aluminum, trimethyl indium, trimethylgallium, triethylgallium, or mixtures thereof, and ammonia as the nitrogen source, at that, before supply into the reactor 5, the gas flows 1, 2 are directed to connected to the reactor 5 at least one mixing chamber 3 for the gaseous mixture preparation, after which the resultant gaseous mixture is directed to the reactor 5 through the flow generator 4, configured to supply gases to the reactor 5 under laminar flow conditions, wherein, the chamber 3 walls and the flow generator 4 are heated and maintained at the temperature of 40÷400 °C, at that, the mixing chamber 3 internal volume satisfies the relation V < Q ⋅ (P_st / P) 4T / T_st) ⋅ 1 s, where V is the mixing chamber internal volume, cm³; Q is the full total gas flow through the chamber, expressed in cm³/s, under standard conditions; P_st, T_st are the temperature and pressure standard values (P = 10⁵ Pa, T = 273.15 K); P is the pressure in the mixing chamber; T is the minimum temperature in the mixing chamber. Due to these solutions, into the reactor a gaseous mixture with the specified parameters is supplied, and at the same time the vortices generation is eliminated. Mixing chamber maximum allowable volume is chosen taking into account the process parameters and the heterojunctions required sharpness.

EFFECT: as a result, enabling the possibility to obtain the Group III metals nitrides based multilayer epitaxial structures with specified parameters with simultaneous increase in their epitaxial growth process productivity and profitability.

3 cl, 8 dwg, 3 tbl