METHOD AND DEVICE FOR PRODUCING FRACTAL-LIKE STRUCTURE Russian patent published in 2002 - IPC

Abstract RU 2180160 C1

FIELD: plasma physics; electron-ion plasma processes and technologies. SUBSTANCE: proposed method and device may be used to obtain nanostructures and fractal-like aggregates when producing heterogeneous-phase working media of radiation sources, coatings possessing new physical properties, means and media for transmitting and transforming concentrated energy fluxes and electrical potential. Method involves generation of slightly ionized gas stream from source plasmaforming material, cooling of slightly ionized gas stream to condensation temperature, production of nanostructures from neutral and charged particles, aggregation of nanostructures to form clusters, and their growth to obtain fractal-like structures. Slightly ionized gas flow is obtained during pulsed diaphragm jet electrical discharge with flowing jets of high-temperature erosion products and with off-design parameter found experimentally for producing space-time structure of jet and for controlling aggregation process of fractal- like structures. Device implementing proposed method has pressurized discharge chamber incorporating power supply, evacuated gas system, ring electrodes whose inner holes are made in the from of truncated cones with their apexes facing each other, as well as diaphragm made of plasma-forming insulating material and mounted on ring electrode pin. Power supply is high-voltage adjustable-amplitude and adjustable-shape current pulse generator; diaphragm has round hole with appropriate radius r to length l ratio. Fractal-like structures can be produced from actually any material and aggregated to form structures of desired parameters: fractal dimension, linear size of aggregate and its components, anisotropic shape, etc. Fractal-like structures can be deposited on substrate surfaces. EFFECT: enhanced yield; enlarged functional; capabilities. 5 cl, 3 dwg

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RU 2 180 160 C1

Authors

Kalashnikov E.V.

Rachkulik S.N.

Dates

2002-02-27Published

2000-07-05Filed