PROCEDURE FOR PRODUCING ALLOYED LAYERS WITH ION IMPLANTATION Russian patent published in 2010 - IPC C23C14/48 C23C14/58 

FIELD: metallurgy.

SUBSTANCE: invention refers to procedure of production of thin layers of material with ion implantation and can be implemented at modifying substrates out of metals, dielectrics and transistors. According to the procedure ion implantation is carried out in jet diaphragm discharge (JDD) in vacuum under magnet-gas-dynamic (MGD) mode with gas-dynamic and electro-magnet acceleration of discharge products of plasma generating material. Also the process of ionisation and ion acceleration is performed with amplitude of current power of the 1 discharge chosen from the condition: l₀>7.1·10⁴·l₀ ^1.4/r₀ ^1.4(1+r₀/l₀), A, where r₀ - is radius of an orifice in the plasma generating diaphragm, cm, and l₀ - is length of the orifice in the plasma generating diaphragm, cm. Amount of intrusion substance D is chosen from condition: D=k·α·m_Σ, g, where k - is number of charge pulses, α=0.15…0.18 - is share of weight of products of light erosion of alloying material transferred in axial zone of the jet during time t_imp,sec, m_Σ=ω-t_imp - is summary loss of weight of alloying material off an internal wall of the diaphragm orifice with jets of plasma of JDD per 1 pulse, g, ω - is average rate of loss of alloying material weight for MGD mode, g/sec. Also ions are intruded into the substrate from the axial zone of JDD flow. Upon intrusion the substrate with produced alloyed layers is annealed.

EFFECT: upgraded quality of alloyed layers and accuracy of implanted element dosing, expanded functionality of implementation of substances of various classes.

2 dwg, 1 ex