FIELD: electronic engineering; manufacture of silicon devices. SUBSTANCE: method involves pre-treatment of boron nitride plates mounted in holder perpendicular to gas flow by dry oxygen, installation of silicon plates in holder in center of clearance between boron nitride plates followed by heat treatment of silicon plates in dry oxygen environment at temperature ranging between 840 and 900 C, change to neutral atmosphere, and one more heat treatment at 840-900 or 780-840 C. Oxygen and neutral gas are dried out by passing them through concentrated sulfuric acid; silicon plates are mounted in holder in dry atmosphere. EFFECT: enhanced degree of uniformity and surface resistance of boron-doped regions obtained in the process. 6 cl, 1 dwg, 2 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR DIFFUSION OF BORON IN SILICON | 2011 |
|
RU2475883C1 |
| METHOD FOR PRODUCTION OF BOROSILICATE LAYERS IN MANUFACTURE OF POWER TRANSISTORS | 2020 |
|
RU2786376C2 |
| METHOD OF FORMING ACTIVE p-REGION OF SOLAR CELLS | 2014 |
|
RU2575613C2 |
| HIGH-POWER DMOS-TRANSISTOR MANUFACTURING PROCESS | 2000 |
|
RU2189089C2 |
| METHOD OF DIFFUSING BORON | 2006 |
|
RU2361316C2 |
| METHOD OF CREATING ALLOYED REGIONS OF SEMICONDUCTING INSTRUMENTS AND INTEGRAL MICRO-CIRCUITS | 1982 |
|
RU1083842C |
| METHOD FOR MANUFACTURING SILICON-ON-INSULATOR STRUCTURE | 1999 |
|
RU2173914C1 |
| METHOD OF MANUFACTURING MICROWAVE TRANSISTOR STRUCTURES | 0 |
|
SU669995A1 |
| METHOD OF MANUFACTURING POWERFUL HF TRANSISTOR STRUCTURES | 0 |
|
SU705924A1 |
| METHOD OF MANUFACTURING SILICON NITRIDE-BASED PRODUCTS | 2003 |
|
RU2239613C1 |
