FIELD: physics.
SUBSTANCE: invention relates to the technology of making silicon power transistors, particularly for making an active base region. The method of diffusing boron involves a process of making boronsilicate glass from a gaseous phase. A solid flat diffusant source is used with the following ratio of components in the gaseous phase: nitrogen -N2=240 l/h, oxygen - O2=120 l/h, hydrogen - H2=7.5 l/l, at operating temperature of 800°C and 10-15 minutes duration of the process.
EFFECT: reduced variation of surface concentration on the entire surface of the silicon wafer, reduced duration and temperature of the process.
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