FIELD: physics.
SUBSTANCE: method of forming an active p+-region of solar cells includes a boron diffusion process using a liquid source - boron trichloride (BCl3). As the diffusion source a liquid source - boron trichloride (BCl3), with the following consumption of gases: oxygen O2=12 l/h, nitrogen N2=380 l/h, N2+H2=380 l/h, BCl3=2 l/h, 1000 ppm is used.
EFFECT: invention enables to obtain a borosilicate layer from a liquid source of boron trichloride while reducing the range of surface resistance values on a silicon wafer, reduces the temperature and duration of the process.
3 ex
| Title | Year | Author | Number | 
|---|---|---|---|
| PRODUCTION OF POWER TRANSISTOR GATE AREA | 2014 | 
 | RU2594652C1 | 
| METHOD FOR PRODUCTION OF BOROSILICATE LAYERS IN MANUFACTURE OF POWER TRANSISTORS | 2020 | 
 | RU2786376C2 | 
| METHOD OF DIFFUSING BORON | 2006 | 
 | RU2361316C2 | 
| METHOD FOR FORMING TRANSISTOR EMITTER ZONE | 2013 | 
 | RU2542591C1 | 
| METHOD OF PHOSPHORUS DIFFUSION FROM HARD PLANAR SOURCE | 2008 | 
 | RU2359355C1 | 
| PRODUCTION OF POWER TRANSISTOR SOURCE AREA | 2014 | 
 | RU2567405C2 | 
| BORON DIFFUSION METHOD FOR FORMING P-REGION | 2013 | 
 | RU2524151C1 | 
| CONFIGURING ACTIVE N-AREA OF SOLAR ELEMENTS | 2014 | 
 | RU2586267C2 | 
| METHOD OF DIFFUSING PHOSPHOROUS FROM PHOSPHOROUS-SILICATE FILMS | 2008 | 
 | RU2371807C1 | 
| METHOD OF MAKING BORON-CONTAINING FILMS | 2006 | 
 | RU2378739C2 | 
Authors
Dates
2016-02-20—Published
2014-07-04—Filed