HIGH-POWER DMOS-TRANSISTOR MANUFACTURING PROCESS Russian patent published in 2002 - IPC

FIELD: semiconductor engineering; manufacture of vertical-structure silicon double-diffused metal-oxide-semiconductor transistors. SUBSTANCE: process includes new combination and sequence of operations: deposition of additional silicon nitride layer onto polycrystalline silicon in shielding coating; formation of definite-thickness thermal silicon dioxide layer in shielding coating; local growth of additional definite-thickness thermal silicon dioxide layer in shielding coating ports above source regions of transistor cells prior to depositing interlayer insulation on face side of substrate; removal of shielding coating from face side of substrate; formation of insulation under gate from thermal silicon dioxide passivated by silicatephosphate glass and gate electrode from low-resistance polycrystalline silicon or high-melting metal between additional local layers of thermal silicon dioxide. EFFECT: enhanced resistance of devices to ionizing rays (mainly gamma-rays) to meet requirements to advanced special-purpose electronic equipment. 2 cl, 5 dwg