METHOD FOR MANUFACTURING SILICON-ON-INSULATOR STRUCTURE Russian patent published in 2001 - IPC

FIELD: semiconductor engineering. SUBSTANCE: method for manufacturing silicon-on-insulator structures with thin layer of silicon deposited on insulator includes mechanical treatment and chemical-mechanical polishing of silicon plates, deposition of insulating layer on at least one plate, washing and formation of water-absorbing surfaces, jointing of plate surfaces with insulating layer in-between, thermal compression of joined plates followed by thinning with aid of chemical-mechanical polishing of at least one of interconnected plates. After insulating layer is formed, its surface is subjected to chemical- mechanical polishing. Plates are brought in contact by rolling them at the same time applying elastic force to press them to each other. At least one of plates should be brought to desired thickness starting from 10-25 mcm by chemical etching with 30-45% alkali aqueous solution while locally heating it from 20 to 60 C at points where silicon layer thickness is greater so as to equalize its thickness by raising etching speed in heating area; Insulating layer is additionally polished by chemical-mechanical treatment for 5-10 min while gradually reducing polishing-compound pH from 9.8 to 7.8-8 and stopping supply of abrasive compound at final stage for 0.5-1 min. EFFECT: facilitated procedure, improved quality, minimized quantity of bubbles, improved quality of thin silicon layer on insulator. 4 dwg, 1 tbl, 3 ex