METHOD FOR DIFFUSION OF BORON IN SILICON Russian patent published in 2013 - IPC H01L21/22 

FIELD: electrical engineering.

SUBSTANCE: according to the method for diffusion of boron in silicon, ox darted BN plates, after storage in the atmosphere of air containing non saturated water vapours and prior to placement of such plates alongside with silicon plates in a silica boat, are etched in concentrated HF for 30-60 sec, washed in a flow of deionised water for 10-15 sec for removal of most hygroscopic boron compounds, annealed first in a neutral medium at a boron diffusion temperature within the range of 930°C-1000°C for at least 30 min and then - in dry oxygen atmosphere, repeatedly annealed at the same atmosphere for at least 30 min; treated boron plates and silicon plates are loaded into the boat and diffusion of boron into silicon is performed.

EFFECT: reproducibility of the process of boron diffusion into silicon.

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