METHOD FOR PRODUCING THREE-DIMENSIONAL ELECTRICITY CONDUCTING OR SEMICONDUCTING STRUCTURES AND METHODS FOR DESTROYING THEM Russian patent published in 2002 - IPC

FIELD: microelectronic devices. SUBSTANCE: each material structure incorporated in matrix having two or more materials in spatially separated structures is irradiated with rays of preset strength and/or frequency response adapted to material response to radiation; rays are spatially modulated according to definite protocol presenting predetermined configuration of electricity conducting or semiconducting structures in particular material structure and two-dimensional conducting or semiconducting structures of predetermined configuration are produced in material structure in response to radiation to form matrix of material structures with three-dimensional conducting or semiconducting structures. Methods for destroying electricity conducting or semiconducting structures of above-mentioned type are also proposed. EFFECT: reduced cost of large-scale production of electrical junctions in thin-film structures. 37 cl, 20 dwg, 9 ex