FIELD: electronic engineering. SUBSTANCE: transistor has electrodes 2, 4, 5 and insulators 3 in vertical layers so that at least electrodes 4, 5 and insulators 3 form step 6 positioned vertically relative to first electrode 2 or substrate 1. Alternative designs of transistor are proposed and p-n field-effect transistor or metal-oxide-semiconductor (MOS) transistor has its electrodes 2, 5 forming transistor drain and source, respectively, and electrode 4 forms its gate; layers of vertical step 6 are covered with amorphous polycrystalline or microcrystalline inorganic or organic semiconductor material that forms active semiconductor of transistor coming in direct or indirect contact with gate electrode 8 and produces vertically positioned channel of p-n transistor 9 between first and second electrodes 2 and 5, respectively. Transistor vertical step 6 is produced using photolithographic process and active soluble amorphous semiconductor material 8 is deposited on top of first electrode 2 and vertical step 6 so that vertically positioned channel is formed between drain and source electrodes 2 and 5, respectively. Semiconductor material of p-n transistor is in direct contact with gate electrode 4. MOS transistor has vertically positioned gate insulator 7 produced between gate electrode 4 and semiconductor material 8. EFFECT: reduced area required for producing channel of desired length. 17 cl, 5 dwg
