FIELD: data storage and processing devices. SUBSTANCE: device has RAM and/or WORM, and/or WRITABLE modules and/or processing modules. Memory and/or processing modules are made in the form of plurality of main layers placed above substrate. Device incorporates active components affording its functioning. Device manufacturing process includes formation of memory and/or processing modules on substrate by sequential application of layers under heat in which case lower layer or layers that have been applied and processed already are not subjected to steady state or transient temperatures to raise their ultimate stability. Proposed configuration makes it possible to integrate compact two-dimensional combinations of single-bit locations into three-dimensional memory structures at reduced cost. Low-temperature processes and materials suited to them are used for the process. EFFECT: reduced cost, random-access time, and power requirement; enhanced packing factor. 37 cl, 10 dwg
Title | Year | Author | Number |
---|---|---|---|
SEGNETOELECTRIC DEVICE FOR PROCESSING DATA | 1998 |
|
RU2184400C2 |
SCALED INTEGRATED DATA PROCESSING DEVICE | 1999 |
|
RU2201015C2 |
READ-ONLY MEMORY AND READ-ONLY MEMORY DEVICE | 1998 |
|
RU2212716C2 |
READ-ONLY MEMORY AND READ-ONLY MEMORY DEVICES | 1998 |
|
RU2216055C2 |
ELECTRICALLY ADDRESSED DEVICE , ELECTRICAL ADDRESSING METHOD, AND APPLICATION OF THIS DEVICE AND THIS METHOD | 1998 |
|
RU2182732C2 |
SCALABLE DATA PROCESSING DEVICE | 1999 |
|
RU2201639C1 |
DEVICE WITH MATRIX ADDRESSING, HAVING ONE OR MORE MEMORIZING DEVICES | 2002 |
|
RU2261500C2 |
THREE-DIMENSIONAL MEMORIZING DEVICE | 2002 |
|
RU2274913C2 |
METHOD AND ELECTRIC-FIELD GENERATOR/MODULATOR FOR PRODUCING ELECTRICITY CONDUCTING AND/OR SEMICONDUCTING THREE-DIMENSIONAL STRUCTURES AND METHOD FOR KILLING THESE STRUCTURES | 1999 |
|
RU2210834C2 |
FIELD-EFFECT TRANSISTOR | 1999 |
|
RU2189665C2 |
Authors
Dates
2003-07-10—Published
1999-06-02—Filed