FIELD: computer engineering. SUBSTANCE: device has thin film of segnetoelectric material as data carrier, data processing unit and data storage unit. When manufacturing the device, the first electrode structure is sequentially applied to a substrate, insulating material layer and the second electrode layer. The insulating layer is removed from the areas not covered with the second electrode structure. The segnetoelectric thin film covers the electrode structures as continuous or structural layer. EFFECT: high density in saving bits per area unit. 22 cl, 13 dwg, 1 tbl
