FIELD: technology for manufacturing ferro-electric memory cells and engineering of ferroelectric memory device.
SUBSTANCE: aforementioned memory device contains ferroelectric memory cells, at least two sets of electrodes, parallel to other electrodes of set, while electrodes of one are set are positioned practically orthogonally to electrodes of closest next set of electrodes. Method for manufacturing aforementioned memory cells in composition of aforementioned memory device includes forming first electrode, containing at least one layer of metal and at least one metal-oxide layer, above first electrode ferroelectric layer is applied, consisting of thin film of ferroelectric polymer, and then onto this ferroelectric layer at least second electrode is applied, contains at least one layer of metal and at least one metal-oxide layer.
EFFECT: high surface density of cells, possible application of upper electrodes without damage to ferro-electric memory material.
2 cl, 7 dwg
