FIELD: devices with matrix addressing.
SUBSTANCE: device with matrix addressing has one or more memory devices with memory cells, made with possible switching in several directions and built in form of passive elements massive with matrix addressing. Memory cells has memory environment in form of ferroelectric or electret thin-film material, capable of polarization under effect from applied electric field and showing hysteretic properties, while it is recommended, that memorizing material was polymer or copolymer. Memory device in device has at least first and second electrode sets. Second set electrodes are positioned in grooves, made on first set electrodes, and are directed orthogonally to first set electrodes, while grooves are deep only for half-height of first said electrodes. Second set electrodes in grooves are surrounded by memorizing material, which is also in contact with first set electrodes intersecting with it. Thus, memory cells are formed in places of intersection of first and second electrode sets, formed by memorizing material, which from at least three sides surrounds second set electrodes, and these three different areas provide at least three directions for switching the memory cell. Two or more memorizing devices can be included in a packet, to realize a device with possible volumetric data storage.
EFFECT: higher efficiency, simplified construction, lower costs.
8 dwg, 17 dwg
