READ-ONLY MEMORY AND READ-ONLY MEMORY DEVICE Russian patent published in 2003 - IPC

Abstract RU 2212716 C2

FIELD: electrically addressed nonvolatile read-only memory devices. SUBSTANCE: electrically addressed nonvolatile read-only memory has aggregate of memory locations, passive matrix incorporating parallel electrodes, vertical and horizontal buses, semiconductor material, and insulating material. Read-only memory device has one or more electrically addressed nonvolatile memories as well as master and control circuits and provides for multilayer coding of desired memory locations or their addresses and for organizing three-dimensional memory device. EFFECT: enlarged functional capabilities. 20 cl, 15 dwg

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RU 2 212 716 C2

Authors

Gudesen Khans Gude

Nordal' Per-Ehrik

Lejstad Gejrr I.

Dates

2003-09-20Published

1998-08-28Filed