FIELD: electrically addressed nonvolatile read-only memory devices. SUBSTANCE: electrically addressed nonvolatile read-only memory has aggregate of memory locations, passive matrix incorporating parallel electrodes, vertical and horizontal buses, semiconductor material, and insulating material. Read-only memory device has one or more electrically addressed nonvolatile memories as well as master and control circuits and provides for multilayer coding of desired memory locations or their addresses and for organizing three-dimensional memory device. EFFECT: enlarged functional capabilities. 20 cl, 15 dwg
Authors
Dates
2003-09-20—Published
1998-08-28—Filed