FIELD: electric engineering.
SUBSTANCE: device has ferroelectric memory cell in form of thin ferroelectric polymer film, two electrodes, while at least one of said electrodes has at least one contact layer, which has conductive polymer in contact with memory cell, and if necessary has second layer in from of metallic film in contact with conductive polymer. Method for manufacturing ferroelectric memory contour includes operations for applying on substrate of first contact layer in from of thin film of conductive polymer and applying thin ferroelectric polymer film on first contact layer and second contact layer on thin ferroelectric polymer film.
EFFECT: increased polarization level of ferro-electric memory cell and decreased field strength.
2 cl, 12 dwg, 3 ex
