FIELD: power units, in particular rectifier circuits built around field-effect metal-oxide- semiconductor transistors. SUBSTANCE: proposed power supply has switching field-effect MOS transistors whose sources are connected to ground and power transformer whose secondary windings are inserted between switching transistor drain and positive output of power supply. Transistor gate is controlled by means of low-power transformers inserted between switching-transistor drain and power-transformer secondary winding; separate gate control circuit immediately drives field-effect MOS transistors in conduction or cuts them off depending on secondary voltage across mentioned power transformer. EFFECT: enhanced switching speed and reduced power loss. 4 cl, 5 dwg
