FIELD: semiconductor power components. SUBSTANCE: turn-off structure of two-way control thyristor should turn on spontaneously due to unwanted migration of charge carriers. This is attained due to the fact that degree of closure of regions rises in direction of isolating region. In particular it may be attained due to the fact that density of shorting regions per surface area unit tends to maximum value in direction of isolating region. Best solution is using solid rectilinear shorting region passing along isolating region. EFFECT: enhanced reliability of isolation between thyristor structures. 8 cl, 4 dwg
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