PROCESS OF GROWING SINGLE-CRYSTALS OF QUARTZ Russian patent published in 2003 - IPC

FIELD: growing single-crystals from solutions with use of pressure, specifically, by hydrothermal method. SUBSTANCE: proposed process can be used in manufacture of seed wafers with small number of dislocations for shorter time. In correspondence with invention seed coming in the form of trilateral frame open in direction of region +X, made of base seed of ZY or XY cut and additional elements parallel to its edges is placed into autoclave where single-crystal is built up by hydrothermal method under increased temperature and pressure to thickness 5.0-15.0 mm, as minimum, in direction of region +X. Then seed is removed from autoclave, starting part of base seed is cut out of it on side of region +X so that bi-directional trilateral frame open in directions of regions +X and -X is formed with following ratio of heights of additional elements remained after removal of starting base seed: h_-X = (1/4-1/2)h_+X,, where h is height of additional elements in directions of + X and -X correspondingly. Later remaining seed is placed again into autoclave and single-crystal of quartz is built up under same conditions to required dimensions. EFFECT: production of low-dislocation crystals during shorter time. 1 cl, 1 dwg