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2 120 502

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IPC

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Application

96118200/25, 1996-09-10

(22)

Actual filing date

1996-09-10

(45)

Published

1998-10-20

(72)

Inventor

Dorogovin B.A.Verin V.I.Sopeleva E.G.Mukhanova N.G.Mareeva T.V.

(73)

Holder

Vserossijskij Nauchno-Issledovatel'Skij Institut Sinteza Mineral'Nogo Syr'Ja

METHOD OF PREPARING SYNTHETIC QUARTZ MONOCRYSTALS Russian patent published in 1998 - IPC

Abstract RU 2120502 C1

FIELD: crystal growing. SUBSTANCE: invention provides hydrothermal growth by recrystallization of quartz charge onto seed plate of ZY face in vertical autoclave. Novelty consists in that crystallization X axis of seed plates in crystallization chamber is oriented along vertical axis of vessel, faces of positive or negative prism being directed upward. EFFECT: enabled growing pure quartz crystals with maximum yield of working region for piezodielectric technics with no additional expenses. 3 dwg

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RU 2 120 502 C1

Authors

Dorogovin B.A.

Verin V.I.

Sopeleva E.G.

Mukhanova N.G.

Mareeva T.V.

Dates

1998-10-20—Published

1996-09-10—Filed

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