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2 186 885

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IPC

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Application

2001121448/12, 2001-08-01

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Start date

2001-08-01

(22)

Actual filing date

2001-08-01

(45)

Published

2002-08-10

(72)

Inventor

Gordienko L.A.Dorogovin B.A.Orlov O.M.Poljanskij E.V.Tsinober L.I.Shvanskij P.P.

(73)

Holder

Federal'Noe Gosudarstvennoe Unitarnoe Predprijatie Nauchno-Issledovatel'Skij Institut Sinteza Mineral'Nogo Syr'Ja"

METHOD OF GROWING OF SYNTHETIC QUARTZ CRYSTALS Russian patent published in 2002 - IPC

Abstract RU 2186885 C1

FIELD: growing of synthetic crystals, particularly, quartz single crystals of large sizes and required quality; applicable mainly in modern electronics. SUBSTANCE: method of growing of synthetic quartz crystals by hydrothermal method includes recrystallization of quartz mixture on rod seeds at presence of temperature differential between chambers of growing and dissolving. Use is made of rod seeds oriented with their length along crystallographic axis . In this case, side members of rod seeds are outlined either by four faces of main negative rhombohedron r(01.1), , and , or by two faces of positive and negative triangular prism and and by two faces of the second rhombohedron (10.2) and or they are of cylindrical shape; and also rod sees made form low- dislocation or dislocation-free regions of preliminarily grown r/r crystals. EFFECT: reduced density of grown-in dislocations or produced fully dislocation- free crystals of synthetic quartz. 2 cl, 8 dwg

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RU 2 186 885 C1

Authors

Gordienko L.A.

Dorogovin B.A.

Orlov O.M.

Poljanskij E.V.

Tsinober L.I.

Shvanskij P.P.

Dates

2002-08-10—Published

2001-08-01—Filed