TECHNOLOGICAL PLANT FOR HYDROTHERMAL GROWING OF QUARTZ CRYSTALS Russian patent published in 2006 - IPC C30B7/00 C30B29/18 

FIELD: apparatus for hydrothermal synthesis of crystals, quartz in particular; chemical industry.

SUBSTANCE: proposed technological plant has housing whose bottom is mounted on support through bearing heat-insulating ring having charge dissolving zone and crystallization zone with seeding plates divided vertically by diaphragm; housing is provided with external heater in crystallization zone and two-section heat insulating system and cover in which temperature and pressure monitoring units are mounted in crystallization zone whose heat-insulating section is separated from housing at clearance for venting it. Housing of plant is additionally provided with internal heater in charge dissolving zone and external heater in area of bottom; both heat-insulating sections are made from sectionalized semi-rigid plate made from mineral wool in shielding external and internal ferrules made from zinc-coated steel; heat-insulating section of charge dissolving zone tightly fay to housing on the outside; it is provided with temperature monitoring system in form of thermocouple. Two-section heat-insulating system made from semi-rigid mineral wool plate reliably controls transfer of heat of heated reservoir into surrounding medium, thus enhancing thermostatting of crystallization zone and ensuring maintenance of required temperature differential between crystal growth zone and charge dissolving zone and consequently improving quality of crystals being grown. Combination heating system (main heating system with internal heater and additional heating system with external heaters) ensures reliable maintenance of working parameters of technological process; additional heater reduces quartzing of charge in lower portion of reservoir and forming of hardly-soluble mineral compounds.

EFFECT: improved quality of crystals.

1 dwg