SEMICONDUCTOR LASER WITH WIDE PERIODICALLY SECTIONALIZED STRIPE CONTACT Russian patent published in 2003 - IPC

FIELD: laser engineering; diode pumping systems; medical lasers; laser systems for information science, office equipment, and show business. SUBSTANCE: semiconductor laser has high-reflectivity coated mirror, active element provided with periodically sectionalized electrode, collimating lens, and waveguide-grid mirror inclined through angle θ to active element axis. High-reflectivity coated mirror is made in the form of multilayer dielectric coating applied to butt-end of active element. Waveguide-grid mirror is made either in the form of film waveguide applied to corrugated substrate, or in the form of corrugated waveguide layer applied to planar substrate, or in the form of dielectric layer with periodically modulated refractive index applied to planar insulating substrate. Semiconductor lasers of various modifications have active element in the form of diode laser strip, or in the form of set of laser diodes or laser-diode strips disposed one under other but so that butt-ends of all laser diodes occur in same plane. Partially reflecting mirror, or sectionalized waveguide-grid mirror, or both function as components affording optical coupling among separate laser diodes. EFFECT: enhanced brightness of wide-active-area laser and reduced spectral width of its radiation line. 23 cl, 6 dwg