MULTICHANNEL SEMICONDUCTOR LASER Russian patent published in 1997 - IPC

Abstract RU 2095901 C1

FIELD: optoelectronics; optical communications and data processing systems. SUBSTANCE: output end of laser is coated with two insulating layers one of which functions as single- mode waveguide and other one is buffer layer that optically isolates waveguide from medium with high refraction index. Waveguide layer is corrugated with period Λ = λ/n*, where n* is RMS refraction index of waveguide mode. Waveguide corrugation provides for narrow-band light reflection in direction normal to its surface and light spread over this waveguide widens reflected light beam. This aids in coherent light generation throughout entire sectional area of active region resulting in its low divergence in p-n junction plane. EFFECT: reduced width of radiation line, improved operating reliability, reduced size, facilitated manufacture. 1 dwg

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RU 2 095 901 C1

Authors

Sychugov Vladimir Aleksandrovich

Tishchenko Aleksandr Valentinovich

Sychugov Gleb Vladimirovich

Dates

1997-11-10Published

1993-04-12Filed