FIELD: growing monocrystals by freezing at temperature gradient on seed crystal without solvents; industrial growing of large crystals under weightlessness conditions. SUBSTANCE: seed crystal 5 is inserted in holder 4; seed crystal is introduced in graphite tube 6 without clearance, thus forming crucible which is filled with charge by melting charge till it is filled with melt 7 to capacity. Junction of thermocouple 11 is axially located immediately before seed crystal 5. Graphite rod 8 with thermocouples 9 and 10 passed through passages in rod 8 is placed on surface of melt 7; thermocouple 9 is located along axis and thermocouple 10 is located near wall of graphite tube 6. Signals from thermocouples 9, 10 and 11 are furnished to computer which performs control of crystal growth in accordance with program preset. EFFECT: improved quality of crystals. 23 cl, 1 dwg, 3 ex
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