CRYSTAL GROWING METHOD Russian patent published in 2003 - IPC

FIELD: growing of monocrystals. SUBSTANCE: apparatus has main upper heater 1 and lower heater 2. Both heaters are located in chamber (not shown on drawing) to create axially symmetric heating zone, with temperature in top part of said zone being higher than in bottom part thereof. Quartz tube 3 is positioned inside heaters. Holder 4 of crystal 5 is axially arranged in lower part of quartz tube 3. Holder 4 is terminated with graphite tube 6. At the initial growing stage, primer serving as crystal 5 is tightly (without gap) introduced into graphite tube 6 to prevent melt 7 from flowing out. Graphite bar 8 with internal channels for thermocouples 9 and 10 is positioned above melt surface. First thermocouple 11 is positioned immediately under lower end of primer. Method allows monocrystals of large diameters to be grown even under zero gravity conditions. EFFECT: increased efficiency and improved quality of grown monocrystals. 12 cl, 1 dwg, 3 ex