CRYSTAL GROWING METHOD Russian patent published in 2003 - IPC

Abstract RU 2199615 C1

FIELD: growing of monocrystals. SUBSTANCE: apparatus has main upper heater 1 and lower heater 2. Both heaters are located in chamber (not shown on drawing) to create axially symmetric heating zone, with temperature in top part of said zone being higher than in bottom part thereof. Quartz tube 3 is positioned inside heaters. Holder 4 of crystal 5 is axially arranged in lower part of quartz tube 3. Holder 4 is terminated with graphite tube 6. At the initial growing stage, primer serving as crystal 5 is tightly (without gap) introduced into graphite tube 6 to prevent melt 7 from flowing out. Graphite bar 8 with internal channels for thermocouples 9 and 10 is positioned above melt surface. First thermocouple 11 is positioned immediately under lower end of primer. Method allows monocrystals of large diameters to be grown even under zero gravity conditions. EFFECT: increased efficiency and improved quality of grown monocrystals. 12 cl, 1 dwg, 3 ex

Similar patents RU2199615C1

Title Year Author Number
METHOD OF GROWING CRYSTALS 2002
  • Strelov V.I.
  • Zakharov B.G.
  • Anan'Ev P.A.
  • Serebrjakov Ju.A.
RU2199614C1
METHOD OF GROWING MONOCRYSTALS-SCINTILLATORS BASED ON SODIUM IODIDE OR CAESIUM IODIDE AND DEVICE FOR IMPLEMENTING METHOD 2006
  • Golyshev Vladimir Dmitrievich
  • Gonik Mikhail Aleksandrovich
RU2338815C2
FACILITY FOR SINGLE CRYSTALS GROWING BY METHOD OF AXIAL HEAT CURRENT NEARBY SOLID-MELT INTERFACE 2007
  • Gonik Mikhail Aleksandrovich
RU2357021C1
METHOD OF GERMANIUM SINGLE CRYSTALS GROWING BY OTF METHOD 2006
  • Bykova Svetlana Viktorovna
  • Golyshev Vladimir Dmitrievich
  • Gonik Mikhail Aleksandrovich
  • Tsvetovskij Vladimir Borisovich
RU2330127C2
APPARATUS FOR GROWING CRYSTALS 2013
  • Petrov Jurij Ivanovich
  • Khnykov Valerij Mikhajlovich
RU2532551C1
METHOD FOR GROWING OF HOLLOW CYLINDRICAL SINGLE CRYSTALS OF SILICON BASED ON CHOKHRALSKY METHOD AND DEVICE FOR ITS REALISATION 2007
  • Kozhitov Lev Vasil'Evich
  • Kondratenko Timofej Timofeevich
  • Krapukhin Vsevolod Valer'Evich
  • Kazimirov Nikolaj Ivanovich
  • Sorokin Sergej Leonidovich
  • Taradej Vladimir Aleksandrovich
  • Bliev Aleksandr Petrovich
  • Silaev Ivan Vadimovich
RU2355831C2
APPARATUS FOR GROWING SINGLE CRYSTALS OF GALLIUM ARSENIDE BY THE CZOCHRALSKI METHOD 2021
  • Knyazev Stanislav Nikolaevich
  • Romanenko Aleksandr Aleksandrovich
  • Zykova Eleonora Maisovna
  • Martynov Igor Dmitrievich
  • Yugova Tatyana Georgievna
RU2785892C1
METHOD OF GROWING GERMANIUM MONOCRYSTALS WITH DIAMETRE OF UP TO 150 mm USING OTF METHOD 2008
  • Golyshev Vladimir Dmitrievich
  • Tsvetovskij Vladimir Borisovich
  • Bykova Svetlana Viktorovna
RU2381305C1
METHOD FOR GROWING SINGLE CRYSTALS 1991
  • Kozhemjakin Gennadij Nikolaevich[Ua]
RU2035530C1
FACILITY FOR GROWING OF SINGLE CRYSTALS BY METHOD OF AXIAL HEAT CURRENT NEARBY SOLID-MELT INTRFACE (SOLID-MELT HEATER) WITH OVERPRESSURE OF GAS IN GROWING VESSEL 2007
  • Gonik Mikhail Aleksandrovich
RU2357022C1

RU 2 199 615 C1

Authors

Zakharov B.G.

Strelov V.I.

Sidorov V.S.

Dates

2003-02-27Published

2002-01-28Filed