METHOD OF PRODUCTION OF RESISTIVE SILICON Russian patent published in 2003 - IPC

FIELD: electronic engineering; technology of production of semiconductor materials resistant to radiation and temperature fields. SUBSTANCE: proposed method of production of silicon of n-type conductivity consists in treatment of polycrystalline silicon of p-type by multiple-pass cruicibleless zonal melting at introduction of thermostabilizing admixtures at concentrations of from 1×10¹³ cm^-3 to 1×10¹⁴ cm^-3 into molten zone. Then alloyed high-ohmic monocrystal of silicon of p-type conductivity at concentration of from 1×10¹² cm^-3 to 5×10¹² cm^-3 by boron is cooled to room temperature at rate not higher than 1 deg/min, after which silicon crystal of n-type conductivity at concentration by phosphorus exceeding level of residual concentration by 1.5-2 times is obtained by means of precision neutron transmutation alloying. . Proposed method increases life of nonbasic carriers of charge , reduces variation of specific electrical resistance in volume of monocrystal retaining the parameters at multi-component external action in the course of manufacture and operation of electronic devices. EFFECT: enhanced efficiency. 3 cl, 2 tbl