PROCESS FOR GERMANIUM SINGLE CRYSTAL GROWTH Russian patent published in 1994 - IPC

Abstract RU 2014372 C1

FIELD: semiconductor metallurgy. SUBSTANCE: the starting germanium material is melted. Thereafter, (3-5)·10^-4 % by weight of neodymium dopant is added to the molten metal, and germanium single crystal is drawn from the melt to the seeding step. EFFECT: provides increase in lifetime of minority carriers and decrease in majority-to-minority carrier lifetime.

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RU 2 014 372 C1

Authors

Alimov O.M.

Petrov V.V.

Prosolovich V.S.

Kharchenko K.V.

Javid V.Ju.

Dates

1994-06-15—Published

1991-04-22—Filed