FIELD: metallurgy.
SUBSTANCE: invention relates to production of silicon monocrystals by Czochralski method or silicon multicrystals by method of directed crystallisation to be used in making solar cells and modules with higher operating performances. Proposed method comprises preparing initial mix alloyed with boron and its melting. Note here that aluminium is added to produced melt in amount sufficient for allow ratio between concentrations of aluminium and oxygen equal to 1-102.
EFFECT: p-type conductance silicon with low concentration of oxygen.
1 ex
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