METHOD FOR CONTROLLING PROCESS FOR GROWING CRYSTALS AND APPARATUS FOR AUTOMATICALLY CONTROLLING CRYSTAL GROWING PROCESS Russian patent published in 2003 - IPC

FIELD: systems for controlling processes for making semiconductor materials, for growing monocrystals in spatial conditions without operator. SUBSTANCE: method comprises steps of periodically interrupting power supply of melt heater at heating sample in order to apply to circuit high frequency measuring voltage; forming signal indicating achievement of phase conversion of sample material; correcting readings of thermocouple of melt zone according to difference between current and real temperature values; after providing temperature gradient in heating zone displacing gradient zone of heating along the whole length of sample. Such method is realized by using apparatus for controlling process of crystal growing. Said apparatus includes heaters of melt 1; vials with sample 3; power amplifiers 4,5; multichannel temperature regulator 6; thermocouples 7, 8 of heaters; control unit 9; motion drive unit 10, motion speed controller 11, pickups 12 and 13 for detecting initial and final positions. Power circuit of melt heater includes opening contacts of controlled switch 14, capacitor 15 which together with melt heater through closing contact of switch forms measuring circuit connected with inlet of phase conversion signal shaper 16 to which power is supplied from generator 17 and which detects time moment of starting melting. EFFECT: manufacture of semiconductor crystalline materials of enhanced quality. 2 cl, 1 dwg