METHOD FOR MEASURING THICKNESS OF FILM ON SUBSTRATE Russian patent published in 2003 - IPC

Abstract RU 2207501 C2

FIELD: processes for measuring thickness of film on substrate. SUBSTANCE: method comprises steps of irradiating surface of substrate with optical irradiation; readjusting wave length of irradiation; registering signal reflected from surface for further analysis of dependence of intensity of reflected signal from wave length defining film thickness; approximating dependence of reflected signal intensity from wave length by function representing reflection coefficient of three-layer system "air - film material -substrate material"; calculating approximated parameters and determining film thickness according to parameters of approximating function. EFFECT: lowered possibility of error occurring while measuring at condition influenced by inner and outer noises. 1 dwg, 1 tbl

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RU 2 207 501 C2

Authors

Belov M.L.

Berezin S.V.

Gorodnichev V.A.

Kozintsev V.I.

Strelkov B.V.

Dates

2003-06-27Published

2001-06-29Filed