COMBINED THIN-FILM RESISTIVE STRUCTURE WITH TEMPERATURE SELF-COMPENSATION Russian patent published in 2023 - IPC H01C17/75 H01C17/232 

FIELD: electrical engineering.

SUBSTANCE: invention relates to a combined thin-film resistive structure with temperature self-compensation of two successive resistance sections with opposite signs of the temperature coefficient of resistance (TCR). The combined structure is made on a dielectric substrate using vacuum deposition and photolithography, followed by annealing and laser adjustment of the overall TCR. Improving the performance characteristics of thin-film resistors due to a decrease in the TCR value in the range of measured temperatures from -60 to 200°C is a technical result, which is achieved due to the fact that the resistive film is sprayed onto a dielectric substrate made of aluminium oxide and heated to 400°C with plasma-chemical cleaning of the surface of the substrate, while sequential deposition of film layers of K20C cermet and nickel (Ni) is performed in a single technological cycle at an evaporator current of 480-500 A and 400-480 A, respectively.

EFFECT: improving the performance characteristics of thin-film resistors.

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