FIELD: chemical industry. SUBSTANCE: the invention is dealt with technologies of processing of semi-conducting gallium phosphide waste products to extract the expensive and deficient gallium. The method used for production of gallium from the waste products of semi-conducting gallium phosphide includes its vacuum-thermal decomposition at heating in a plumbago crucible under the temperature of 1050-1200 C and a residual pressure of 0.133-6.666 Pa (1•10-3 - 5•10-2 mmHg) with separation of resulting phosphorus from gallium in the decomposition zone by condensation of vapors of phosphorus in the condenser with its subsequent oxidation up to phosphoric anhydride and its dissolution in water. The method is realized by a device, that includes: a heater, a quartz reactor, a plumbago crucible located in the reactor, a vacuum system, a metal water-cooled condenser, lines of delivery of oxygen and an inert gas. At that an inlet branch pipe of vacuum the system is located after the condenser and an inlet branch pipe of oxygen delivery in front of the condenser. The method and the device allow to increase a degree of extraction of gallium from the waste products of semi-conducting gallium phosphide and to reduce amount of the waste products. EFFECT: the invention allows to increase a degree of extraction of gallium and to reduce semi-conducting gallium phosphide waste products. 2 cl, 1 dwg, 1 tbl _
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Authors
Dates
2004-04-10—Published
2002-01-17—Filed