FIELD: technological processes.
SUBSTANCE: technical gallium is subjected to vacuum-thermal treatment in a vacuum chamber accommodating graphite crucibles, coaxially located one above other. In centre of bottom of crucibles located above lower melting pot, there is a cylindrical protrusion, on its side surface along perimeter there are holes. Technical gallium is loaded into lower crucible chamber is evacuated to 1·10-3-1·10-5 mmHg, heated to temperature of 1,400-1,500 °C crucible bottom and maintaining said temperature for 2-6 hours. Gallium after vacuum-thermal treatment is subjected to triple crystallisation purification by directed crystallisation at crystal growth rate of 1 cm/h. Technical result is production of gallium metal with gallium content of not less than 99.99999 % by weight.
EFFECT: obtaining gallium of high purity.
2 cl, 2 dwg, 2 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR OBTAINING HIGH-PURITY INDIUM | 2012 |
|
RU2507283C1 |
| VACUUM SILICONE CLEANING METHOD AND DEVICE FOR ITS IMPLEMENTATION | 2009 |
|
RU2403300C1 |
| ARSENIC VACUUM EXTRACTION METHOD WITHOUT CONTAMINATION OF ENVIRONMENT AND EQUIPMENT FOR PREFORMING THE SAME | 2003 |
|
RU2293130C2 |
| GOLD EXTRACTION METHOD FROM CONCENTRATE CONTAINING ARSENIC AND GOLD AND EQUIPMENT FOR PERFORMING THE SAME | 2003 |
|
RU2293127C2 |
| VACUUM SILICONE CLEANING METHOD AND DEVICE FOR ITS IMPLEMENTATION (VERSIONS) | 2009 |
|
RU2403299C1 |
| METHOD OF REFINING METALLURGICAL SILICON | 2011 |
|
RU2465200C1 |
| METHOD OF VACUUM CLEANING OF SILICON | 2008 |
|
RU2381990C1 |
| METHOD OF GALLIUM-ARSENIC-BEARING WASTES PROCESSING | 1995 |
|
RU2078842C1 |
| METHOD OF PRODUCING POLYCRYSTALLINE SILICON INGOTS | 2011 |
|
RU2465201C1 |
| METHOD FOR SMELTING HEAT-RESISTANT COPPER BASE ALLOYS | 2023 |
|
RU2807237C1 |
