APPARATUS FOR GROWING SINGLE CRYSTALS OF GALLIUM ARSENIDE BY THE CZOCHRALSKI METHOD Russian patent published in 2022 - IPC C30B15/00 C30B15/04 C30B15/14 C30B15/18 C30B15/20 C30B15/30 C30B30/04 C30B35/00 C30B29/42 H05B6/34 H05B6/44 F27D27/00 

FIELD: crystals.

SUBSTANCE: invention relates to equipment for growing single crystals of gallium arsenide with great potential for use in microelectronics, solar energy, and IR optics. Apparatus for growing single crystals of gallium arsenide by the Czochralski method includes a water-cooled growing chamber with a melt crucible installed inside the chamber, wherein a graphite fence-type heater is installed around the walls of said crucible, with an inductor located around heater, made of three graphite coils A, B, and C, positioned coaxially one above the other, each of the coils made in the form of 4 graphite rings 14 with a rectangular cross section with slots, connected stepwise into turns by graphite inserts 16 and fastened together with pins 17 made of a composite material connecting all 12 rings into a single structure, while electrical insulation ceramic inserts 15 are installed between the graphite rings 14 of coils A, B, and C, composite bars connected to current leads 19 are attached to the beginnings of coils A, B, and C, the ends of coils A, B, and C are electrically interconnected by composite bars in the "star" pattern, and the inductor and the heater both have individual power sources, configured to be operated and controlled independently.

EFFECT: heater and the inductor being separated and due the structural simplification of the latter lead to a more uniform temperature distribution in the crystallisation front region, as well as a more uniform dopant distribution along the length and cross section of the crystal.

1 cl, 5 dwg