LOW-TEMPERATURE METHOD OF FORMING GALLIUM PHOSPHIDE SEMICONDUCTOR LAYERS AND SOLID SOLUTIONS BASED ON IT SILICON SUBSTRATES Russian patent published in 2019 - IPC H01L21/20 

FIELD: electronic equipment.

SUBSTANCE: invention relates to semiconductor opto- and microelectronics and can be used in designing devices based on semiconductor heterostructures, including multi-junction photoelectric converters. Task solved by the present invention is reduction of diffusion of atoms of III and V group into silicon at formation of semiconductor layers of gallium phosphide (GaP) and nitrogen-containing solid solutions based on it (GaPN) due to reduction of deposition process temperature.

EFFECT: technical result is formation on the surface of silicon using the disclosed method gallium phosphide and its solid solutions (GaPN) layers with roughness not exceeding 1 nm, and reducing the concentration of defects in the silicon substrate in the near-surface region near the GaP/Si interface.

5 cl, 4 dwg