POWER SEMICONDUCTOR DEVICE OF TABLET STRUCTURE Russian patent published in 2004 - IPC

FIELD: semiconductor high-power electronics.

SUBSTANCE: power semiconductor device of tablet structure has lower metal base that is one electrode of device, semiconductor rectifying element anchored on lower base, upper metal base installed on semiconductor rectifying element which is another electrode of device, framework made of dielectric material. Metal membranes with collars are pressed against planes of bases, annular grooves into which collars of membranes mentioned above are entered are made in both butts of framework. Grooves are filled with elastic dielectric material, tube produced from dielectric material, for example, thermally shrunk dielectric material is put on framework so that its ends overlap annular grooves of framework as result of deformation.

EFFECT: manufacture of repairable structure of semiconductor device with small overall dimensions.

2 cl, 1 dwg